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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 11 i d @ v gs = 12v, t c = 100c continuous drain current 7.0 i dm pulsed drain current 44 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 11 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 2.6 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology provides high performance power mosfets for spaceapplications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened jansr2n7270u power mosfet surface mount (smd-1) www.irf.com 1 500v, n-channel rad-hard ? hexfet ? technology product summary part number radiation level r ds(on) i d qpl part number irhn7450 100k rads (si) 0.45 ? 11a jansr2n7270u irhn3450 300k rads (si) 0.45 ? 11a jansf2n7270u irhn4450 500k rads (si) 0.45 ? 11a jansg2n7270u irhn8450 1000k rads (si) 0.45 ? 11a jansh2n7270u irhn7450 smd-1 ref: mil-prf-19500/603 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight pd - 90819b downloaded from: http:/// 2 www.irf.com irhn7450, jansr2n7270u pre- irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 500 v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.6 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.45 v gs = 12v, i d = 7.0a on-state resistance 0.50 ? v gs = 12v, i d = 11a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 4.0 s ( )v ds > 15v, i ds = 7.0a i dss zero gate voltage drain current 50 v ds = 400v,v gs =0v 250 v ds = 400v v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 150 v gs = 12v, i d = 11a q gs gate-to-source charge 30 nc v ds = 250v q gd gate-to-drain (miller) charge 75 t d (on) turn-on delay time 45 v dd = 250v, i d = 11a, t r rise time 190 v gs = 12v, r g = 2.35 ? t d (off) turn-off delay time 190 t f fall time 130 l s + l d total inductance 4.0 c iss input capacitance 4000 v gs = 0v, v ds = 25v c oss output capacitance 330 p f f = 1.0mhz c rss reverse transfer capacitance 52 na ? nh ns a note: corresponding spice and saber models are available on the international rectifier website. source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 11 i sm pulse source current (body diode) 44 v sd diode forward voltage 1.6 v t j = 25c, i s = 11a, v gs = 0v t rr reverse recovery time 1100 ns t j = 25c, i f = 11a, di/dt 100a/ s q rr reverse recovery charge 16 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from the center of drain pad to center of source pad thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.83 r thj-pcb junction-to-pc board 6.6 soldered to a 1sq. copper-clad board c/w downloaded from: http:/// www.irf.com 3 pre-irradiation irhn7450, jansr2n7270u table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k- 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 500 500 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 50 50 a v ds =400v, v gs = 0v r ds(on) static drain-to-source 0.45 0.6 ? v gs = 12v, i d = 7.0a on-state resistance (to-3) r ds(on) static drain-to-source 0.45 0.6 ? v gs = 12v, i d =7.0a on-state resistance (smd-1) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irhn7450 (jansr2n7270u)2. part numbers irhn3450 (jansf2n7270u), irhn4450 (jansg2n7270u) and irhn8450 (jansh2n7270u) fig a. single event effect, safe operating area v sd diode forward voltage 1.6 1.6 v v gs = 0v, i s = 11a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @ vgs=0v @vgs=-5v @vgs=-10v @vgs=-15v @vgs=-20v ni 28 265 41 275 275 - - - 0 100 200 300 400 -20 -15 -10 -5 0 vgs vds ni downloaded from: http:/// 4 www.irf.com irhn7450, jansr2n7270u pre- irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure downloaded from: http:/// www.irf.com 5 pre-irradiation irhn7450, jansr2n7270u post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation downloaded from: http:/// 6 www.irf.com irhn7450, jansr2n7270u pre- irradiation post-irradiation radiation characteristics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc downloaded from: http:/// www.irf.com 7 pre-irradiation irhn7450, jansr2n7270u radiation characteristics fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads (si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 400 vdc downloaded from: http:/// 8 www.irf.com irhn7450, jansr2n7270u pre- irradiation downloaded from: http:/// www.irf.com 9 pre-irradiation irhn7450, jansr2n7270u ! ! " " " #$ downloaded from: http:/// 10 www.irf.com irhn7450, jansr2n7270u pre- irradiation $ v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " v gs downloaded from: http:/// www.irf.com 11 pre-irradiation irhn7450, jansr2n7270u q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:/// 12 www.irf.com irhn7450, jansr2n7270u pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 400 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l 7.4mh peak i l = 11a, v gs =12v i sd 11a, di/dt 140a/ s, v dd 500v, t j 150c foot notes: case outline and dimensions smd-1 p ad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006 downloaded from: http:/// |
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